The resonance level improves the thermoelectric properties of germanium telluride

Recently, the team of Professor Zhang Wenqing, Institute of Materials Genome Engineering, Shanghai University, and Professor Jihui Yang, Department of Materials Science and Engineering, University of Washington (click to view the introduction) cooperated with the research team of GeTe thermoelectric materials, following the basic ideas of materials genome science, integrated material calculation, material preparation and material characterization. The first principle method is used to calculate the electron energy band and electron energy state density of GeTe high and low temperature two phases. In groups In the key of the IIIA, they found that the elements of indium (In) the most can cause the change of state density near the Fermi level, combined with the theoretical design of doping amount, the preparation of a series of doping In GeTe samples, ZT Materials of the highest thermal power optimal value is 1.3, the average temperature for ZT at 0.7, compared with the doped samples by about 70%, further performance optimization for GeTe material provides a possible model and practical application of the results, published In the recent NPG Asia Materials. Professor Yang Jiong and Professor Zhang Wenqing of The Institute of Materials Genomics Engineering, Shanghai University and Professor Jihui Yang of Washington University are the corresponding authors. Shanghai University Materials Genome Engineering Institute as the first unit. The research work is supported by the National Natural Science Foundation of China, Shanghai Natural Science Foundation of China, Shanghai Oriental Scholars and other projects