Nickel silicide Ni2Si

Chemical composition: Si:4.3%,Mg:0.1% Ni
Density: 8.585 g/cm3
Resistance: 0.365 mm m2/m
Resistance temperature coefficient (20-100 degrees c) 689×10 minus 6 over k
The coefficient of thermal expansion (20-100 degrees C) is 17×10 to the minus 6 over k
Thermal conductivity of 100 degrees C, 27xwm to the minus 1, K to the minus 1
Melting point: 1309℃.

 
Application Field:
Among semiconductor materials, silicon is the most widely used, and many kinds of metal silicides are studied and used
Semiconductor device contact and interconnection technology, MoSi2 and WSi, Ni2Si have been introduced into microelectronics
In the development of the device, these silicon films match well with the silicon material itself, and can be used in the silicon parts
Insulation, isolation, passivation, interconnection,
The nickel silicate formation process has low silicon consumption and low formation heat budget, and has low resistivity, but does not exist
Therefore,Ni2Si is the most promising self-aligned silicide material for nanoscale devices
Extensive attention and research.
In the graphene electrode, nickel silicification and cracking of the silicon electrode are delayed and the conductivity of the electrode is improved.
Wetting and spreading effect of Ni2Si alloy on SiC ceramics under different temperature and atmosphere.