Select bismuth titanate specific work introduction

Bil2Ti020 material was prepared by solution hydrothermal method. Crystals with graded structure such as micron ball, micron flower, nanorod and nanowire were synthesized. For controllable morphology, this paper analyzes the reaction temperature, reaction time, pH and PVA concentration on Bil2Ti020 morphology and structure, the influence of the reaction parameters of the material controllable morphology, proposed the nanoparticles a micron spend a growth mechanism of nanowires – micro ball and focuses on the material of optical and light catalytic properties. The results showed that the nanowires had the best photocatalytic performance.

At the same time, the highly dispersed micron spheres were prepared by the hydrothermal method without surfactant and template. Bi4Ti3012 nanometer powder was synthesized by metalloorganic precursor method. The fluorescence and photocatalytic properties of different heat treated samples were demonstrated. Use PBR (Peroxide). -based. Route everyday emulsion method combined with new chemical methods to prepare Bi4Ti3012 nanometer powder with good dispersibility. Based on DSC thermal analysis, activation energy and Avrami index (ib) of nanometer powder crystallization process were calculated by using the knowledge of non-equilibrium crystallization kinetics. We studied BIT, BhTi3, WxOl2+x+O. 2wt % Cr203 (BTWC), Bi4Ti3 — 2xNbxTaxOl2 (BTNT) and Bi4Ti3. 2 XNB. Crystal structure, microscopic morphology, dielectric, piezoelectric and conductive properties of SbvOl2 (BTNTS) ceramics. For BIT ceramics, the synthesis process was optimized, the optimal process parameters were determined, and the piezoelectric coefficient d33 = 8pC/N was tested.

For BTWC ceramics, the lattice parameters are determined: the presence of the second phase is found when the doping amount is high; The room temperature dielectric constant and dielectric loss increase with the increase of doping amount. Let me show you that x is equal to 0. The best piezoelectric coefficient da3 = 22pC/N was obtained for the sample of 025 with the minimum conductivity. For BTNT and BTNTS ceramics, it is shown that they have octahedral structure. Nb/Ta doping inhibits the growth of grains, while a small amount of Sb/Nb/Ta doping does not greatly affect the size of ceramic grains.

With the increase of doping amount, the Curie temperature of BIT modified by Nb/Ta decreased to 6300C, while that of BIT modified by Sb/Nb/Ta changed little. B-site doping effectively controls the deformation of oxygen octahedron and oxygen vacancy concentration, leading to the improvement of its piezoelectric properties, namely BigTi2. 98 nbo. Ol per thousand. OlOl2 and Bi4Ti2. 9 snbo. OtTao. 002 of sbo. 008012 obtained the best piezoelectric coefficients d33 = 26pC/N and / 33 = 35pC/N, and maintained a high Curie temperature. The activation energy of relaxation excitation and dc conductance excitation was analyzed by electrokinetic mode behavior.

Compared with the classical physical model, it is determined that the corrected potential transition model is most suitable for analyzing the electronic transport phenomenon of the ceramics

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