Application of nanometer silicon carbide powder in catalyst and capacitor

Due to its large specific surface area, suitable band gap (2.39-3.33ev) and excellent thermodynamic and chemical stability, nanometer silicon carbide powder has a wide range of applications in photocatalysis and electrocatalysis. On the other hand, due to its stable chemical properties, nano-sic nanomaterials can also be used as catalyst carriers and supported metal nanoparticles for multiphase catalysis and fuel cell catalysis. It is reported that the nanocrystalline nanocrystalline nanocrystalline betac-sic wires are coated on the surface of amorphous nanocrystalline SiO2 by means of thermal evaporation. In addition, nanometer beta-sic nanomaterials also have high activity in photocatalytic decomposition of water to produce hydrogen and electrocatalytic hydrogen evolution. Ultrathin nanometer beta-sic crystals have been prepared by electrochemical etching, and their electrocatalytic activity in hydrogen evolution is comparable to that of commercial Pt electrodes. As a catalyst carrier, nanometer silicon carbide powder can be used for multiphase catalysis. It is reported that Ni particles supported by nano-sic tube can catalyze the oxidation of H2S gas at low temperature (60 ° c). In addition, nano-sic material has a place in the catalyst carrier of fuel cell, which can improve the activity and stability of Pt and Pd catalysts, and reduce the amount of catalyst.

Supercapacitors, also known as double-layer capacitors, store charges by forming a double-layer between electrode materials and electrolytes with high specific surface area. In recent years, supercapacitors have become a very important energy storage device due to their high power density, fast charging and discharging performance and long cycle life. Nanometer silicon carbide powder is an ideal electrode material for supercapacitor with high specific surface area and excellent thermodynamic and chemical stability. It was reported that nanometer SiC wires were grown on flexible carbon fibers as electrode materials, and the area capacitance was measured to be 20.3 mF/cm, much larger than the area capacity of 1.2mF/cm of carbon fibers alone. Moreover, the capacity did not decrease much after 105 cycles at room temperature. Such excellent cyclic stability was attributed to the thermodynamic and chemical properties of the nanometer silicon carbide wire stability.

Nanometer silicon carbide powder has better performance than traditional silicon carbide powder, which can meet the strict requirements in the field of high and new technology. Nano beta SiC as one of the core of the third generation of semiconductor material, high hardness, high strength, high thermal conductivity, high band gap width, the critical breakdown voltage, oxidation resistance and chemical resistance and other excellent properties, in the composite materials, optoelectronic devices, field emission body absorbing materials, catalyst carrier, and biocompatibility materials in the fields of wide application.

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