Monthly Archives - March 2020

The invention relates to a titanium aluminum carbon and titanium carbide composite hydrogen storage material and a preparation method thereof

Technical scheme of the invention are as follows: a carbon titanium aluminum and titanium carbide composite hydrogen storage material, its characteristic is: described in the composite hydrogen storage material is composed of the following components: titanium aluminum carbon for ternary compound, described the specific of Ti3AlC2 or Ti2AlC, titanium carbide described as TiCx, of which 0.48 x 0.8 or less, or less composite hydrogen storage materials of titanium aluminum carbon mass ratio of 2% to 15%, the rest for [...]

A method for preparing molybdenum boride powder

A method of preparation of boride molybdenum powder preparation steps in the synthesis of high temperature and high pressure way, according to the synthetic before B/Mo mole ratio of n (n = 0.5, 1, 2, 2.5, 4) Settings, in full compliance with material control design phase of boride molybdenum powder, achieve the boride phase of molybdenum materials synthesis and controllable, and synthesis of boride molybdenum powder granularity and the crystal grain size is complete, excellent performance. The method has [...]

A method for preparing large area monolayer tungsten selenide single crystal

The present invention relates to the field of microelectronics technology, in particular to a Chemical vapor deposition (CVD) method for the preparation of a single crystal of monolayer tungsten diselenide (WSe2). Background technology: With molybdenum disulfide (MoS2), two dock selenide (WSe2) represented by a two-dimensional function of transition metal chalcogenide materials in the process of multi-layer to single layer, can be achieved by indirect band gap to direct band gap, with its unique physical and chemical properties make it in electronic [...]

Application of tungsten oxide

Tungsten oxide, also known as tungsten hua, chemical formula WO3. Pale yellow rhombic crystal, the color deepened when heated, and then returned to light yellow after cooling. Stable in air, melting point is 1473℃, boiling point is higher than 1750℃, relative density is 7. 16. Insoluble in water and inorganic acids except hydrofluoric acid, soluble in hot concentrated sodium hydroxide solution and ammonia water. Tungsten oxide is both an n-type semiconductor material and a “d0” oxide, which gives it [...]