Monthly Archives - 五月 2020

Comparison of ni-cr and tantalum nitride film resistors in communication applications

Prior to the widespread acceptance of surface mounted sheet resistors in the 1980s and 1990s, metallized hole mounted molded resistance was usually used in precision applications. Through hole mounted discrete resistors have always been made by depositing thin film resistive materials on cylindrical ceramics. The leads are connected to both ends of the ceramic and the columnar resistance devices are molded or coated to produce a fully sealed product as shown in figure 1. The sheet resistance shown in [...]

Main applications of tantalum silicide

Metal silicides are similar to metals in electrical conductivity, high temperature performance, oxidation resistance and compatibility with the production process of silicon integrated circuits. Transition metal silicides can be used for low-resistance gate and interwire, schottky gate and resistance contact. Tantalum silicide preparation method includes: the combustion synthesis (combustionsynthesis, CS) or self-propagating high-temperature synthesis, arc melting method, etc. Combustion synthesis or self-propagating high temperature synthesis is a method for the synthesis of intermetallic compounds by the exothermic reaction of [...]

Preparation of zirconium tungstate

1.. Impregnation method A certain amount of zrocl2.8h20 was dissolved in an appropriate amount of deionized water, and ammonia was added to form a hydrogel. The pH value was adjusted to 9.0. After being placed at room temperature for 12h, the precipitate was filtered and washed with deionized water to be chlorine-free (0.1 mol·L ~ AgN03 solution was used for detection). Then the filter cake was soaked in anhydrous ethanol and alcoholized for 12 h in a constant temperature drying [...]