The molecular weight of nickel silicate is 145.51, the melting point is 1309℃, and the relative density is 7.217. Nickel silicate dissolves rapidly in hydrofluoric acid, slowly in hydrochloric acid, and insoluble in water. Nickel silicate reacts violently with fluorine at room temperature to white heat, and chlorine gas reacts with red heat. Nickel silicate decomposes in aqua regia. Method: The silicon oxide, nickel oxide (Ⅱ) and aluminum can be heated in the blast furnace.
Metallic silicide has low resistivity, high thermal stability, can be self-aligned on silicon substrate growth, and is not easy to diffuse in silicon, so it is promising to be used as interconnection materials. Nickel silicified nanowires have low silicification temperature and less silicon consumption in the reaction process, so they have become the focus of current research.
CN200810066522.6 reported a preparation method of nickel silicide nanowires, which includes the following steps: a silicon substrate is provided and a silicon dioxide layer is formed on the surface of the silicon substrate; A titanium layer is deposited on the surface of the silica layer of the silicon substrate; A growing device is provided, and the growing device has a reaction chamber, and the silicon substrate deposited with titanium layer is placed in the reaction chamber, and heated to 500 ~ 1000℃; Nickel clusters are produced by sputtering and deposited on the surface of silicon substrate to grow nickel silicide nanowires. Compared with the prior art, the preparation method of nickel silicide nanowires provided by the invention has the advantages of simple process and low cost, in which nickel clusters are directly deposited on silicon substrate to grow nickel silicide nanowires. In addition, the preparation of nickel silicide nanowires by the above method does not need silicon source gas and will not cause environmental pollution. In addition, the diameter of nickel silicate nanowires can be controlled by controlling the thickness of silica layer and titanium layer and the mass number of deposited nickel clusters.
CN201410285873.1 discloses a battery positive active material material, including: lead oxide, dilute sulfuric acid, arsenic, polypropylene fiber, nickel silicate and sodium dodecyl sulfate, the lead oxide, dilute sulfuric acid, arsenic, polypropylene fiber, nickel silicate and sodium dodecyl sulfate in accordance with the proportion of mixed lead paste, the lead paste in the proportion of each component is as follows: 890~930 parts of lead oxide, 55~85 parts of dilute sulfuric acid, 1~2 parts of arsenic, 15~25 parts of polypropylene fiber, 3~5 parts of nickel silicate and 2~3 parts of sodium dodecyl sulfate. In the above way, the battery positive active material material mentioned in the invention is made by mixing a variety of high quality additives, coated on the grid after hardening, the plate obtained has high structural strength, good conductivity, high capacity and long service life.
