Cobalt silicide CoSi2

Particle size:325mesh
Chemical composition:
Co:51% 聽Si:48.5%
Other impurity:0.5%

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Chemical formula CoSi2. Molecular weight: 115.11. Dark brown trapezius crystal. Melting point 1277 鈩, Relative density 5.3. It can be oxidized at 1200鈩 to erode its surface. Reacts with fluorine at low temperature; It reacts with chlorine at 300 degrees Celsius. Corroded by hydrogen fluoride, dilute, concentrated nitric acid and sulfuric acid, it can also be melted聽Intense alkali erosion. Slow action with boiling hot concentrated hydrochloric acid. CoSi2 has low resistivity,

Good thermal stability, it is widely used as contact in large scale integrated circuits.聽And CoSi2 has a crystal structure similar to Si, so it can form epitaxy on Si substrate聽CoSi2/Si structure used to study interface properties of epitaxial silicon metal. The nanostructure of the silicide is in

A number of fields of nanoelectronics also have potentially important applications: semiconductor silicide nanometers聽Structure (FeSi2) can be used to prepare nanoelectronic active devices in silicon-based nanoluminescent devices聽May have very important applications; Metallic silicides (CoSi2, NiSi2) can be futuristic聽The quantum computer, fault-tolerant Terahertz nanocircuit used in the computer as a nanowires, can be聽An epitaxial silicide conductor is prepared on a silicon substrate whose properties will be compared because there is no grain boundary聽Common metal nanowires are greatly enhanced; Metallic nanostructures can also be used in molecular electronics

A nanometer electrode of one or more molecules.

In the process of semiconductor components, the internal electrical connection points such as gate, source, or drain, Forming a low resistance layer of cobalt disilicate (CoSi2). Generally speaking, the manufacturing method of cobalt disilicate is first A layer of metallic cobalt (Co) is formed on a silicon-containing substrate, and two annealingtreatments are used to convert the cobalt to cobalt disilicate. Among them, the first annealing treatment It is shilling cobalt diffused into a siliceous substrate to form a layer of cobalt silicide (CoSi). The second annealing The treatment involves converting the cobalt silicate layer into cobalt disilicate with a low resistance to reduce the resistance of the component.




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