Material Properties and Application of Gallium Nitride
Material properties GaN is a very stable compound, but also a hard high melting point material, the melting point of about 1700 ℃, GaN has a high degree of ionization, in the Ⅲ-Ⅴ compounds is the highest (0.5 or 0.43). At atmospheric pressure, GaN crystals are generally hexagonal wurtzite structures. It has 4 atoms in a cell, and the atomic volume is about half that of GaAs. Because of its high hardness, but also a good coating protection materials. Chemical properties At [...]
