
Germanium telluride
Other name: Germanium(II) telluride
CAS no. : 12025-39-7
EINECS no. : 234-706-7
Molecular formula: GeTe
Molecular weight: 200.24
Density (g/mL,25℃) : 6.14
Melting point (oC) : 725
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Appearance: black powder
Purity: 4N
Packaging: bottle: 50g/bottle, 1 kg/bottle, bottle with aluminum composite film vacuum packaging;
Storage method
Room temperature airtight avoid light, ventilated dry place
Germanium telluride crysta periodic table W, group element compound semiconductor. Ionic crystals. B.19g1} lint with triangular crystal system. Melting point is 724 C’. It is a direct bandgap semiconductor with a room-temperature forbidden bandwidth of 0.23ev. It is a narrow energy-gap semiconductor with a oct-hole mobility of 7X10 — 3mZILV”s)} degree. Used as infrared emission and detection material.
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EINECS number: 236-610-0
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Molecular weight: 275.4596
Melting point : 224 ° c.
The boiling point: 380 ° c.
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Other name: indium(iii) telluride
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Rhenium dioxide ReO2
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