Diindium triselenide

Other name: indium selenide ,Indium(III)selenide, indium selenide (2:3)

CAS no. : 12056-07-4

EINECS no. : 235-016-9

Formula: In2Se3

Molecular weight: 466.516

Density :5.80 g/cm³

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Appearance: black crystalline powder
Purity :5N or 99.999%;
Process: Vacuum melting 2mol In + 3mol Se= 1mol In2Se3;
Analysis :ICP-MS;XRD (All impurity elements is below 10ppm);
Grain size :100mesh; 200mesh; (or customize);
Application:It is mainly used in CIGS thin-film solar cells or Target

Indium selenide is a Group III-VI compound with a different chemical composition, the most studied of which are InSe and In2Se3. In2Se3 is an N-type semiconductor compound that can be used in fields such as photoelectric conversion, photocatalysis, and electronic devices

Material structure
X-ray diffraction studies of In-Se melts indicate five binary compounds, In4Se3, InSe, In6Se7, In3Se4, In2Se3. One of the most studied are InSe and In2Se3.
In2Se3 mainly includes five crystal structures of α, β, γ, δ and κ.

Physical and chemical properties
α-In2Te3 and γ-In2Te3 can stably exist at room temperature, and their band gap values ​​are 1.2-1.3 eV and 1.9-2.3 eV, respectively.

Single crystal indium selenide can be prepared by the Bridgman-Stockberger method. A certain proportion of selenium and indium are used as raw materials to react for a long time at a high temperature in a tube furnace to produce each compound of indium selenide.
Hydrothermal synthesis of In2Se3 was relatively late. Ascorbic acid was dissolved in ethanol solution at 60 ℃, and then InCl3 and Se powder were added into the reaction vessel and maintained at 220 ℃ for 20 hours. -4μm flower-like γ-In2Se3 spheres.

Research progress
In November 2016, researchers at the University of Manchester and the University of Nottingham synthesized nanoscale thin indium selenide, which has only a few layers of atomic thickness and exhibits semiconductor properties superior to silicon, making it an ideal material to replace silicon for electronic chips in the future

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