Diindium triselenide

Other name: indium selenide ,Indium(III)selenide, indium selenide (2:3)

CAS no. : 12056-07-4

EINECS no. : 235-016-9

Formula: In2Se3

Molecular weight: 466.516

Density :5.80 g/cm鲁

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Appearance: black crystalline powder
Purity :5N or 99.999%;
Process: Vacuum melting 2mol In + 3mol Se= 1mol In2Se3;
Analysis :ICP-MS;XRD (All impurity elements is below 10ppm);
Grain size :100mesh; 200mesh; (or customize);
Application:It is mainly used in CIGS thin-film solar cells or Target

Indium selenide is a Group III-VI compound with a different chemical composition, the most studied of which are InSe and In2Se3. In2Se3 is an N-type semiconductor compound that can be used in fields such as photoelectric conversion, photocatalysis, and electronic devices

Material structure
X-ray diffraction studies of In-Se melts indicate five binary compounds, In4Se3, InSe, In6Se7, In3Se4, In2Se3. One of the most studied are InSe and In2Se3.
In2Se3 mainly includes five crystal structures of 伪, 尾, 纬, 未 and 魏.

Physical and chemical properties
伪-In2Te3 and 纬-In2Te3 can stably exist at room temperature, and their band gap values 鈥嬧媋re 1.2-1.3 eV and 1.9-2.3 eV, respectively.

Single crystal indium selenide can be prepared by the Bridgman-Stockberger method. A certain proportion of selenium and indium are used as raw materials to react for a long time at a high temperature in a tube furnace to produce each compound of indium selenide.
Hydrothermal synthesis of In2Se3 was relatively late. Ascorbic acid was dissolved in ethanol solution at 60 鈩, and then InCl3 and Se powder were added into the reaction vessel and maintained at 220 鈩 for 20 hours. -4渭m flower-like 纬-In2Se3 spheres.

Research progress
In November 2016, researchers at the University of Manchester and the University of Nottingham synthesized nanoscale thin indium selenide, which has only a few layers of atomic thickness and exhibits semiconductor properties superior to silicon, making it an ideal material to replace silicon for electronic chips in the future

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