Other name: indium selenide ,Indium(III)selenide, indium selenide (2:3)
CAS no. : 12056-07-4
EINECS no. : 235-016-9
Molecular weight: 466.516
Density :5.80 g/cm³
Appearance: black crystalline powder
Purity :5N or 99.999%;
Process: Vacuum melting 2mol In + 3mol Se= 1mol In2Se3;
Analysis :ICP-MS;XRD (All impurity elements is below 10ppm);
Grain size :100mesh; 200mesh; (or customize);
Application:It is mainly used in CIGS thin-film solar cells or Target
Indium selenide is a Group III-VI compound with a different chemical composition, the most studied of which are InSe and In2Se3. In2Se3 is an N-type semiconductor compound that can be used in fields such as photoelectric conversion, photocatalysis, and electronic devices
X-ray diffraction studies of In-Se melts indicate five binary compounds, In4Se3, InSe, In6Se7, In3Se4, In2Se3. One of the most studied are InSe and In2Se3.
In2Se3 mainly includes five crystal structures of α, β, γ, δ and κ.
Physical and chemical properties
α-In2Te3 and γ-In2Te3 can stably exist at room temperature, and their band gap values are 1.2-1.3 eV and 1.9-2.3 eV, respectively.
Single crystal indium selenide can be prepared by the Bridgman-Stockberger method. A certain proportion of selenium and indium are used as raw materials to react for a long time at a high temperature in a tube furnace to produce each compound of indium selenide.
Hydrothermal synthesis of In2Se3 was relatively late. Ascorbic acid was dissolved in ethanol solution at 60 ℃, and then InCl3 and Se powder were added into the reaction vessel and maintained at 220 ℃ for 20 hours. -4μm flower-like γ-In2Se3 spheres.
In November 2016, researchers at the University of Manchester and the University of Nottingham synthesized nanoscale thin indium selenide, which has only a few layers of atomic thickness and exhibits semiconductor properties superior to silicon, making it an ideal material to replace silicon for electronic chips in the future
Rhenium trichloride ReCl3 Re≥35% Purity: 99%
Properties: Dark red or purple crystals. Melting point 727℃. Boiling point 800 ~ 850℃. 500℃ vacuum sublimation, vapor green. Soluble in water, acid, base, liquid ammonia and ethanol, slightly soluble in ether.
Gallium trichloride GaCl3
Physical characteristics: Strong hydrolysis in water, produce smoke in moist air. Melting point: 77.9℃ Boiling point: 201.03℃ Density: 2.47g/cm³
Appearance: White crystal or powder.
Digallium triselenide powder
English alias: Gallium (III) selenide; gallium selenide (2: 3)
CAS number: 12024-24-7
EINECS No. 234-693-8
Molecular formula: Ga2Se3
Molecular weight: 376.326
Lanthanum strontium gallium magnesium oxide
Lanthanum strontium gallium magnesium oxide (LSGM) is a ceramic electrolyte material with high ionic conductivity. LSGM is used as an electrolyte membrane to improve SOFC performance or reduce operating temperature. The ionic conductivity of LSGM is about twice that of yttrium-stabilized zirconia (YSZ-8). This LSGM powder is ideal for use in casting, ink formulation, pelletizing and other ceramic manufacturing processes.
Other name: Tellurium(IV) chloride, tetrachloro-lambda~4~-tellane
CAS no. : 10026-07-0
EINECS no. : 233-055-6
Molecular formula: H6Cl4Te.
Molecular weight: 275.4596
Melting point : 224 ° c.
The boiling point: 380 ° c.
Rhenium dioxide ReO2
Specification: ReO2≥99.99%, Re≥85.33%
Appearance: black gray particulate matter.
Other name: GALLIUM SESQUIOXIDE；GALLIUM OXIDE；GALLIUM(III) OXIDE；GALLIUM(+3)OXIDE；digalliumtrioxide；Ga2-O3；Gallia
CAS number: 12024-21-4
EINECS No. 234-691-7
Molecular formula: Ga2O3
Other name: indium(iii) telluride
CAS no. : 1312-45-4
EINECS no. : 215-194-4
Molecular formula: In2Te3
Molecular weight: 612.44
Density (g/mL,25℃) : 5.78
Melting point (oC) : 667
Other name: Rhenium(VII) oxide; trioxo-(trioxorheniooxy)rhenium; trioxo(trioxorheniooxy)rhenium
CAS no. : 1314-68-7
EINECS no. : 215-241-9
Molecular formula: O7Re2
Molecular weight: 484.4098
Density: 6.103 g/mLat 25 ° C (lit.)
Melting point: 220 ° C (lit.)
Boiling point: 360 ° C (lit.)
Flash: 360 ° C
Other name: Germanium(II) telluride
CAS no. : 12025-39-7
EINECS no. : 234-706-7
Molecular formula: GeTe
Molecular weight: 200.24
Density (g/mL,25℃) : 6.14
Melting point (oC) : 725