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Niobium boride
Other name : niobiumbago (NBB); boranylidyneniobium
CAS no. : 12653-77-9; 12045-19-1
EINECS no. : 234-958-8
Formula: B2Nb.
Molecular weight: 103.7174.
Density: 7g/cm3
Melting point: 3050℃
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Praseodymium fluoride
Other name: Praseodymium trifluoride
CAS no. : 13709-46-1
EINECS no. : 237-254-9
Formula: F3Pr.
Molecular weight: 197.9029
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Zirconium tungstate
Other name:
Tungsten zirconium oxide ; Ditungsten zirconium octaoxide
CAS no. : 16853-74-0
EINECS no. : 240-876-3
Molecular formula: Zr(WO4)2
Molecular weight: 586.8992.
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Ytterbium acetylacetonate hydrate
Other name: Ytterbium 2,4-pentanedionate, Ytterbium(III) acetylacetonate hydrate;
CAS no. : 14284-98-1
EINECS no. : 238-198-8
Molecular formula: C15H21O6Yb.
Molecular weight: 470.3636.
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Zinc telluride
Other name: tellanylidenezinc
CAS no. : 1315-11-3
EINECS no. : 215-260-2
Formula: TeZn.
Molecular weight: 193.009
Melting point is 1238.5 ℃
Density: 6.34 g/Ml at 25 ℃
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Tungsten silicide
Other name: Tungsten disilicide
CAS no. : 12039-88-2
EINECS no. : 234-909-0
Formula: Si2W.
Molecular weight: 240.011
Density: 9.40 g/cm3
Melting point: 2165 C.
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Bismuth selenide
Other name: Dibismuth triselenide, bismuth(iii) selenide, bismuth(3+) selenide (2:3)
CAS No. : 12068-69-8
Formula: Bi2Se3.
Molecular weight: 654.8408
Density (g/mL, 25 ℃) : 6.82
Melting point : 710℃
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Bismuth telluride
Other name: Bismuth(III) telluride, dibismuth tritelluride; bismuth(3+) telluride (2:3)
Type N: doped Selenium
Type P: doped Antimony
Grain size: -60 mesh, -100 mesh, -200 mesh, 325 mesh
Electrical conductivity: 1050/950
Thermal conductivity: 1.35/1.3
Seebeck coefficient: 220/280
Test temp.: 300K -
Cadmium telluride
Other name: Cadmium telluride Coating quality Balzers; telluroxocadmium
CAS no. : 1306-25-8
EINECS no. : 215-149-9
Molecular formula: CdTe.
Molecular weight: 240.011.
Density: 5.85 g / cm3
Melting point: 1092 ° C
Boiling point: 1130 ℃
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Tantalum silicide
CAS no. : 12039-79-1
EINECS no. : 234-902-2
Molecular formula: H6Si2Ta.
Molecular weight: 243.16654
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Tantalum nitride
Performance characteristics: high purity, no impurity phase detected by XRD
Tantalum nitride (TaN) has superior physical, chemical and mechanical properties (such as high hardness, wear resistance, chemical inertness, thermal stability and low resistance temperature coefficient), and is widely used in wear-resistant coatings, film resistors and diffusion barriers in integrated circuits -
Tantalum diboride
Other name: tantalum boride (1:2)
CAS no. : 12007-35-1
EINECS no. : 234-234-5
Molecular formula: B2Ta.
Molecular weight: 202.572
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